optek technology, inc. 1215 w. crosby road carrollton, texas 75006 (972) 323-2 200 fax (972) 323-2396 ab so lute maxi mum rat ings drain- source volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 v gate- source volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 v drain cur rent (lim ited by tj max) n- channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 a p- channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 a op er at ing and stor age tem pera ture . . . . . . . . . . . . . . . . . . . . . . . . -55 o c to +150 o c power dis si pa tion t a = 25 o c (both de vices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 w to tal t s = 25 o c (both de vices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 w to tal (1) (ts = substrate that the package is soldered to) notes (1) this rating is provided as an aid to designers. it is dependent upon mounting material and methods and is not measureable as an outgoing test. prod uct bul le tin hct802 sep tem ber 1996 dual en hance ment mode mos fet types hct802, HCT802TX, HCT802TXv fea tures 6 pad surface mount package v ds = 90v r ds(on) <5 w i d(on) n-channel = 1.5a p-channel = 1.1a two devices selected for v ds , i d(on) and r ds(on) similarity full tx processing available gold plated contacts de scrip tion hct802 offers an n-channel and p- channel mos transistor in a hermetic ceramic surface mount package. the devices used are similar to industry standards 2n6661 n-channel device and vp1008 p-channel device. these two enhancement mode mosfets are particularly well matched for v ds , i ds(on) , r ds(on) and g fs . order HCT802TX for processing per mil-prf-19500. typical screening and lot acceptance tests are provided on page 13-4. tx products receive a v gs htrb at 16 v for 48 hrs. at 150 o c and a v ds htrb at 72 v for 160 hrs. at 150 o c. 15-34
types hct802, HCT802TX, HCT802TXv elec tri cal char ac ter is tics (t a = 25 o c un less speci fied oth er wise) sym bol pa rame ters de vice b=both min max units test con di tions b vdss drain- source break down b 90* v i d = 10 m a*, v gs = 0 v th gate thresh old volt age n 0.75 2.5 v v gs = v ds , i d = 1 ma p -2.0 -4.5 v i d = -1 ma i gss gate- body leak age b 100 na v gs = 20 v, v ds = 0 i dss zero gate volt age drain cur rent b 10* m a v ds = 90 v*, v gs = 0 v b 500* m a tj = 150 o c i d(on) on- state drain cur rent n 1.5 a v ds = 25 v, v gs = 10 v p -1.1 a v ds = -15 v, v gs = -10 v r ds(on) drain- source on re sis tance b 5 w v gs = 10 v*, i d = 1 a* g fs for ward trans con duc tance n 170 mmho v ds = 25 v, i d = 0.5 a p 200 mmho v ds = -10 v, i d = -0.5 a c iss in put ca paci tance n 70 pf v ds = 25 v, v gs = 0 v, f = 1 mhz p 150 pf v ds = -25 v, v gs = 0 v, f = 1 mhz c oss com mon source out put ca paci - tance n 40 pf v ds = 25 v, v gs = 0 v, f = 1 mhz p 60 pf v ds = -25 v, v gs = 0 v, f = 1 mhz c rss re verse trans fer ca paci tance n 10 pf v ds = 25 v, v gs = 0 a, f = 1 mhz p 25 pf v ds = -25 v, v gs = 0 a, f = 1 mhz t (on) turn- on- time n 15 ns v dd = 25 v, i d = 1 a, r l = 50 w p 50 ns v dd = -25 v, i d = -0.5 a, r l = 50 w t (off) turn- off- time n 17 ns v dd = 25 v, i d = 1 a, r l = 50 w p 50 ns v dd = -25 v, i d = -0.5 a, r l = 50 w * re verse po lar ity for p- channel de vice op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. op tek tech nol ogy, inc. 1215 w. crosby road car roll ton, texas 75006 (972)323- 2200 fax (972)323- 2396 15- 35
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